CuO thin films on porous silicon (PSi) substrates were prepared via spray pyrolysis method. The structural, optical and electrical properties of the films and the heterojunctions were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer. XRD results show that the film is polycrystalline and have a monoclinic crystal structure. Optical measurement indicates that the films had a low transmittance at the visible range and an optical bandgap of 2.2eV. High rectification was achieved with a maximum photoresponsivity of about 0.59A/W at 400nm, so that the CuO/PSi heterojunction may act as a good candidate for the fabrication of an efficient photodiode.
Keywords: CuO thin films; spray pyrolysis; CuO on PSi; porous silicon
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